Typical conventional methods for producing silicon oxide powder are not designed to reduce costs. However, the present invention demonstrates how it is possible to improve silicon oxide powder to reduce its cost and also to increase its productivity.

The raw material powder mixture is heated to a temperature of about 1100 to 1600 deg C. After the heating process, the mixture is vacuumed. A coolant is added and the powder mixture is cooled down with the coolant. It is then recovered by scraping the mixture.

It is important to note that the reactivity of the mixture increases with the degree of mixing. The reactivity is also influenced by the size of the particle. A larger particle diameter results in less reactivity.

The temperature of the feed conduit should be maintained below 1,300 deg C, as higher temperatures can cause power consumption to increase. It is not critical to use an oxygen gas feed method. Other appropriate methods include feeding the mixture continuously, intermittently, or as pure oxygen gas.

In addition, it is possible to enhance reactivity of the mixture by adding water to the powder mixture. The inclusion of water can also improve contact efficiency.

One way to improve reactivity is to increase the amount of silicon dioxide powder in the mixture. The quantity of silicon dioxide can be increased through the mixing of metal silicon powder. This may be accomplished by breaking a block of metal silicon to a desired particle size in a mill.

tags: semiconductor semiconductor material