GaN (Gallium Nitride), is a third-generation semiconductor materials with a large forbidden spectrum width. It also has superior characteristics to the second-generation Si and first-generation GaAs.
GaN devices operate at temperatures over 200°C due to their high thermal conductivity as well as a large band gap. This allows them to have higher energy densities and greater reliability. A larger prohibited band width and the dielectric breakdown electricity field decrease the resistance of the device. The advantage of this is that the device can operate at high speeds and with high electron saturation.

GaN allows people to obtain larger transistor devices, greater amplifier gains, smaller sizes, and higher energy efficiency. This is in keeping with the constant "tonality” of the semiconductor sector.

The base station power amplifier utilizes GaN and is compatible with the RF GaN technology. Commonly used semiconductor materials for radio frequency applications are gallium arsenide, gaN (GaAs), indium phosphide and gallium nitride.

GaN devices are more powerful than those produced by high-frequency processes, such as indium phosphide and gallium arsenide. GaN is also less reactive to power processes (LDCMOS) or silicon carbide. GaN has a greater instantaneous bandwidth. To achieve this, carrier aggregation techniques as well as the preparation of high frequency carriers can all be used.

Galium nitride works faster than other semiconductors. GaN is capable of achieving higher power density. GaN can achieve higher power density at a certain power level. Smaller devices allow for lower device capacitance, which allows the creation of systems with higher bandwidth. Power Amplifier (PA) is an essential component of an RF circuit.

Current application view shows that the power amplifier consists mainly of a galium arsenide powered amplifier and a complementary metallic oxide semiconductor power amplifier. (CMOSPA) GaAs is the mainstay, but it is not possible to achieve high integration at these high frequencies due to the introduction of GaAs devices.

GaN will be the next hot spot. GaN, being a wide bandgap semiconductor can tolerate higher operating voltages. It is therefore capable of sustaining higher power density and operating temperatures.

Qualcomm President Cristiano amon stated at the Qualcomm 5G/ 4G Summit that between the beginning of the new year and Christmas, the wave will consist of two 5G smartphones. In addition to the commercial phones debuting in 2019, the first wave will include the waves of five-generation mobile phones. The 5G network will deliver speeds up to 10 to 100x faster than the current 4G networks. It is also expected to reach the Gigabit/second level and reduce latency.

Aside from the increased number of required RF devices for display of base station radio transceiver units (RF transceiver units), the base station density and number will both increase significantly. Comparing to 3G and 4, 5G will see RF device usage increase substantially. The maturity of silicon-based GaN technology will allow it to achieve the greatest market success at the lowest cost.

The commercialization of any semiconductor technology is a challenge, as can be seen from the history of both the first and second generations. GaN currently is at this stage. The cost of GaN will go toward civilians.

Luoyang Tech Co. Ltd. (a Gallium Nitride professional manufacturer) has over 12 years' experience in chemical products development and research. We are available to assist you in finding high-quality Gallium Nitride.

tags: semiconductor semiconductor material